发明名称 SEMICONDUCTOR DEVICE PROVIDED WITH ANTIREFLECTION CAP AND SPACER, ITS MANUFACTURE, AND MANUFACTURE OF PHOTORESIST PATTERN USING THE DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with antireflection caps and spacers, a method for manufacturing it, and a method for manufacturing a photoresist pattern using it. SOLUTION: A semiconductor device is provided with a semiconductor substrate 100, a reflecting pattern formed on the substrate 100, antireflection caps 110P formed on the upper surface of the pattern, and antireflection spacers 130S formed on the sidewalls of each component of the pattern. Therefore, the deformation of a photoresist pattern by reflected light rays from the reflecting pattern can be minimized in a photoetching process.</p>
申请公布号 JP2000031037(A) 申请公布日期 2000.01.28
申请号 JP19990137258 申请日期 1999.05.18
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN JINSEI;RI JUGEN;CHO KANKYU
分类号 H01L21/027;G03F7/11;H01L21/28;H01L21/768;H01L31/0232;(IPC1-7):H01L21/027 主分类号 H01L21/027
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