SEMICONDUCTOR DEVICE AND METHOD THEREOF

摘要

PURPOSE: A semiconductor device and method thereof are provided to prevent a thinning phenomenon of film thickness of resist by forming a gentle slope between a memory cell region and a peripheral region. CONSTITUTION: The device comprises a memory cell block(4) having a plurality of capacitors(32b,21a) formed on a main surface(11a) of a silicon substrate(11). The exterior surface of edge portions of the capacitor(21a) of the memory cell block(4) has an upper face(52a) extended by a first height from the main surface(11a) of the silicon substrate(11) and a lower face(21d) extended by a second height having a low height compared to the first height from the main surface(11a) of the silicon substrate(11).