| 发明名称 |
SEMICONDUCTOR SUBSTRATE HAVING A NO DETECTIVE REGION |
| 摘要 |
PURPOSE: A method is provided to fabricate a semiconductor substrate having no detective regions therein. CONSTITUTION: The method for fabricating a semiconductor substrate which an oxygen is concentrated in a region adjacent to a surface of, the method comprises the steps of: forming a trench(14) in the surface of the semiconductor substrate(10); and reducing the oxygen concentration in the region adjacent to the surface of the semiconductor substrate(10) after forming the trench(14). The method further comprises reducing the oxygen concentration in the region adjacent to the surface of the semiconductor substrate(10) by heating the semiconductor substrate(10).
|
| 申请公布号 |
KR20000006001(A) |
申请公布日期 |
2000.01.25 |
| 申请号 |
KR19990021094 |
申请日期 |
1999.06.08 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SHUMENS, MARTIN |
| 分类号 |
H01L27/04;H01L21/208;H01L21/322;H01L21/334;H01L21/76;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/76 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
