发明名称 |
Semiconductor device with element isolation film |
摘要 |
The semiconductor device comprises a semiconductor substrate having an element region, an element isolation film formed on the semiconductor substrate so as to surround the element region, a gate portion crossing the element region and extending over the semiconductor substrate, the gate portion comprising at least a gate insulation film formed on the semiconcuctor substrate and a gate electrode formed on the gate insulation film, and source/drain regions formed on the surface of the element regions on both sides of the gate portion, wherein an upper surface of the element isolation film is formed in substantially the same plane as an upper surface of the gate portion.
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申请公布号 |
US6018185(A) |
申请公布日期 |
2000.01.25 |
申请号 |
US19970861218 |
申请日期 |
1997.05.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MITANI, YUICHIRO;MIZUSHIMA, ICHIRO;KAMBAYASHI, SHIGERU;KUNISHIMA, IWAO;KASHIWAGI, MASAHIRO |
分类号 |
H01L29/78;H01L21/285;H01L21/336;H01L21/60;H01L21/762;H01L21/768;H01L23/485;H01L27/088;H01L29/08;H01L29/417;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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