METHOD FOR FORMING SILICIDE CONDUCTIVE LINE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of silicide conductive lines is provided to prevent an impurity diffusion and reduce a resistivity of the conductive line by making amorphous the silicide layer. CONSTITUTION: The method comprises the steps of: sequentially depositing a gate polysilicon layer(12) doped phosphorous and a tungsten silicide layer(13) on a silicon substrate(10); making amorphous the silicide layer(13) by ion-implanting to the silicide layer; patterning the tungsten silicide layer(13) and the gate polysilicon layer(12) using en etching mask for forming a gate electrode; and recrystallizing the amorphous silicide layer by performing an annealing process.