METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of an isolation layer is provided to prevent a bird's beak by simple process using LOCOS(LOCal Oxidation of Silicon) technique. CONSTITUTION: The method comprises the steps of: sequentially forming a pad oxide(11) and a nitride layer(12) on a semiconductor substrate(10); exposing an inactive region of the semiconductor substrate(10) by excess etching the nitride layer and the pad oxide to form a groove(13) for preventing a bird's beak; forming an amorphous silicon layer((14) on the exposed substrate and the etched nitride layer; forming an amorphous silicon pattern(15) in the exposed substrate by ion-implanting; and forming an isolation layer(16) by LOCOS the resultant structure using the nitride layer(12) as an oxidation mask.