METHOD FOR MANUFACTURING GATE ELECTRODE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method a gate electrode is provided to improve a reliability and properties of devices by using a sloped masking insulator formed on the gate electrode. CONSTITUTION: The manufacturing method comprises the steps of: sequentially forming a gate insulator(14), a conductive layer(16), a masking insulator(18) and an anti-reflection layer(20) on a semiconductor substrate(12); patterning the anti-reflection layer(20) and the masking insulator(18) using a photoresist pattern(22) as an etching mask; slope etching the anti-reflection layer pattern and the upper edge of the masking insulator pattern by sputtering used argon(Ar) gases; forming a gate electrode by etching the conductive layer(16) and the gate insulator(14) using the sloped anti-reflection mask and the sloped masking insulator as a mask; and forming an insulator spacer(24) at both sidewalls of the resultant structure.