METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal line formation method of a semiconductor device is provided to improve a reliability of the metal line by preventing a notch-void caused by thermal stress generated in metal pattern in forming a passivation film. CONSTITUTION: The method comprises the steps of: forming a metal pattern(20) comprising titanium nitride, aluminum, and titanium; and forming a spacer on a side wall of the metal pattern. The spacer is made up of Ti. Thereby, it is possible to improve a reliability of the metal line and to protect components from fixed charges within SOG(silicon on glass) by using the spacer in using a passivation film as SOG.