发明名称 IMPROVED SLEW RATE OUTPUT CIRCUIT FOR DRIVING OUTPUT MOSFET(METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR)
摘要 PURPOSE: A slew rate output circuit is provided to shorten a delay time of an output waveform by controlling a constant current which charges and discharges an input capacitance of an output transistor while maintaining the function of the slew rate. CONSTITUTION: For a short fixed time interval after a transition of an input pulse signal(Vin) from low level to high, a delay circuit(D1) and a NAND gate(G1) generate a signal(Va) of low level so that an output transistor(Q0) is driven by; the input pulse signal having an interposition of a resistor(R0) and a drain of a P-channel transistor(Q1) having an interposition of a resistor(R1). Secondly, for a short fixed time interval after a transition of the input signal from high level to low, a delay circuit(D2) and a NOR gate(G2) generate a signal(Vb) of high level so that the output transistor(Q0) is driven by; the input pulse signal having an interposition of the resistor(R0) and a drain of a N-channel transistor(Q2) having an interposition of a resistor(R2). Finally, for a time interval excluded from the two time intervals mentioned above, the output transistor is driven by the input pulse signal only having an interposition of a resistor(R0).
申请公布号 KR20000005839(A) 申请公布日期 2000.01.25
申请号 KR19990020212 申请日期 1999.06.02
申请人 NEC CORPORATION 发明人 MISSEUDA, SEUYOSI
分类号 H03K17/04;H03K17/16;H03K17/687;H03K19/00;H03K19/003 主分类号 H03K17/04
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