| 摘要 |
PURPOSE: An etching method using a plasma for manufacturing a micro machine and a semiconductor device, a cleaning method of a vacuum receptacle making a plasma processing device, and a matching circuit for matching the plasma processing device with a high frequency impedance of a load are provided to detect a finishing point of the etching or cleaning. CONSTITUTION: The etching method receives a predetermined gas from a gas provider(2) in a vacuum receptacle(1), and discharges the gas to a pump(3), uses a spiral coil high frequency power(4) while keeping the vacuum receptacle(1) with a predetermined pressure, provides the high frequency power to a dome-type spiral coil(6) displaced on the dielectric substance window(5), therefore a plasma is generated in the vacuum receptacle(1). The etching process is performed about the substrate(8) loaded on the substrate electrode(7). At this time, a high frequency power is provided to a substrate electrode(7) and the conductor(11) through the matching circuit(9) by using the high frequency power(10) for a substrate electrode. Therefore, ion energy arrived to the substrate(8) is controlled. A self-alignment bias potential generated in a voltage monitor conductor(11) is monitored, and thus the etching finishing point is detected.
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