| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly reliable giga-bit response avalanche photodiode(APD) having simple element structure. SOLUTION: A laminate structure of an n-type semiconductor buffer layer 12, a semiconductor multiplication layer 13, a p-type semiconductor field relax layer 14, a p-type semiconductor light absorbing layer, a p-type semiconductor cap layer 17 and a p-type semiconductor contact layer 18 is formed is formed on a semiconductor substrate 11. The p-type semiconductor light absorbing layer has a depletion region 15 of 10 nm-0.3μm thick abutting on the p-type semiconductor field relax layer 14, and a nondepletion region 16 of 2μm thick or less contiguous thereto.
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