| 摘要 |
PROBLEM TO BE SOLVED: To generate photovoltaic power sufficiently. SOLUTION: The photodiode 1 has a first insular semiconductor region 5 of first or second conductivity type separated from a polysilicon layer 4 by a dielectric separation film 3 of silicon dioxide, and a second semiconductor region 6 of different conductivity type located in the first semiconductor region 5 wherein photovoltaic power is generated by irradiating the boundary region between the first and second semiconductor region 6 with light. The second semiconductor region 6 is arranged such that the first semiconductor region 5 is sandwiched between the dielectric separation film 3 and the second semiconductor region 6.
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