| 摘要 |
PROBLEM TO BE SOLVED: To embed an Al alloy material in the contact hole of about 0.5μm, without voids in the contact hole and without a diffused layer spike at its burying. SOLUTION: An interlayer insulating film 3 whose film thickness is about 1.0μm is formed on a silicon substrate 1, where a diffused layer 2 is formed on a surface. A contact hole 4 reaching the diffused layer 2 is formed on the interlayer insulating film 3 by known lithography technology and dry etching technology. Then, for example, a first Ti film 5 of about 0.03μm and a first TiN film 6 of about 0.15μm are formed through sputtering. For improving the barrier property of the TiN film 6, nitrogen processing is conducted, or an annealing processing in the furnace of nitrogen or oxygen atmosphere. The film quality of the first TiN film 6 changes with the processing and turns into a TiN film 6a. The TiN film 6a contains oxygen in the film or at least the surface of the film. Then, the second TiN film 7 of about 0.07μm, a second Ti film 8 of about 0.06μm and Al system wiring films 9a and 9b formed of Al or Al alloy are formed in the same atmosphere without being exposed to the atmosphere.
|
