METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to prevent a void of a passivation film from generation for protecting efficiently a device from outside. CONSTITUTION: A method for forming a metal wiring of a semiconductor device comprises: forming photo-resist film patterns(26, 26a) on an Anti-Reflective Coating(ARC) film; a first etching the ARC film, a metal film for wiring, and a barrier metal film by using the photo-resist film patterns as an etching mask; a second etching the ARC film for being the same profile as the first etched metal film for wiring; and eliminating the photo-resist film pattern.