METAL WIRE FORMING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wire forming method is provided to produce a metal wire preventing the loss of Si according to the reaction of a silicon substrate to an adhesion layer. CONSTITUTION: A metal wire is formed by the steps of: evaporating an interlayer insulating film(3) onto a silicon substrate(1) and forming a bit line contact hole to expose a contact layer(2) by etching the interlayer insulating film; evaporating polycrystalline silicon film(4) onto the exposed contact layer; and evaporating Ti film(5) onto the whole structure, Ti film(6) thereunto and tungsten film(7) thereunto.