FUSE BOX FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fuse box forming method of a semiconductor device is provided to decrease the deviation of thickness of an insulating film which remains on a fuse. CONSTITUTION: A fuse box forming method of a semiconductor device comprises the steps of: forming a fuse on an insulating film formed on a semiconductor substrate; forming the 1st insulating film, etching pausing film, the 2nd insulating film on the whole structure; exposing the etching pausing film by selectively etching the 2nd insulating film; remaining part of the 1st insulating film on the fuse by selectively removing part of the etching pausing film and the 1st insulating film.