发明名称 |
ATD PULSE GENERATING DEVICE |
摘要 |
PURPOSE: An ATD pulse generating device is provided to minimize a layout area CONSTITUTION: The ATD pulse generating device including an input circuit portion(1), an address generating portion(2,30) and ATD pulse generating portion(40) wherein the ATD pulse generation portion comprises: a first NMOS transistor(NM30) having a gate to receive the output of the input circuit portion and a source to receive Vcc; a second NMOS transistor(NM40) having a gate to receive the output of the address generation portion, a source to receive Vss and a drain connected to the drain of the first NMOS transistor; a third NMOS transistor(NM50) having a gate to receive the output of the input circuit portion and a source to receive Vss; a fifth NMOS transistor(NM70) having a source connected to the drain of the third NMOS transistor, a gate connected to the source of the first NMOS transistor and a drain to receive Vcc; a fourth NMOS transistor(NM60) having a gate to receive the output of the address generating portion, a drain connected to the source of the fifth NMOS transistor and a source to receive Vss; and an inverter(I4) connected to the drain of the fifth NMOS transistor.
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申请公布号 |
KR20000000910(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980020851 |
申请日期 |
1998.06.05 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
CHEON, BONG JAE;NA, JUN HO |
分类号 |
H03K5/00;(IPC1-7):H03K5/00 |
主分类号 |
H03K5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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