CMOS TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A CMOS transistor and a manufacturing method thereof are provided to prevent the generation of the latch up and the like by forming a NMOS transistor and a PMOS transistor on each semiconductor layer. CONSTITUTION: The CMOS transistor comprises: a first gate electrode formed on a first field of a first conductive semiconductor layer; a second conductive source and drain field formed on the both ends of the first gate electrode; a first insulating film formed on the second field of the first conductive semiconductor substrate; a second conductive semiconductor layer formed on the first insulating film; a second gate electrode formed on the second conductive semiconductor layer; and a first conductive source and drain field formed on the both ends of the second gate electrode.