| 摘要 |
PURPOSE: A memory cell array is provided to increase a margin of a contact junction of by forming a isolation pattern such as a shape of a wings of a bird's, and formed respectively in a direction of vertical, horizontal and vertical in order to not overlap a gate electrode, bit line and a storing electrode. CONSTITUTION: The memory cell array comprising a plurality of active region(11) formed on a silicon substrate such as a shape of a wings of bird's a plurality of bit line contact (13) formed on the central positions of the active region, a plurality of a contact (12) for storing a charge formed on both of edge of the active region, a plurality of gate electrode (25) formed on the active region, connected in horizontal direction, and as a word line, a plurality of bit line (24) connected in vertical direction a top of the a plurality of bit line contact and formed, a plurality of electrode (26) for storing the charge connected a top of a plurality of electrode for storing the charge and formed
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