| 摘要 |
PROBLEM TO BE SOLVED: To form a specified resistor pattern easily on a resistor film by forming a resistor mask of a thin film of a metal having melting point lower than that of Ta or an alloy thereof at the time of patterning the resistor film containing at least Ta. SOLUTION: At the time of forming a specified resistor pattern on a resistor film, a resistor film 2 of metal oxide containing Ta and Si in the form of TaSiO2, for example, is formed by sputtering on a specified substrate 1. A resistor mask 3 of NiCr alloy, NiCrSi alloy, or the like, is then formed by 100-300 nm thick on the resistor film 2. Preferably, the NiCrSi alloy has a composition of 15-20 wt.% of Cr, 0-5 wt.% of Si, and the remainder of Ni and inevitable impurities. Subsequently, photoresist is applied onto the resistor mask 3 and exposed and developed to form a specified resistor pattern.
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