发明名称 |
Method for forming high voltage and low voltage transistors on the same substrate |
摘要 |
A process for forming high voltage and low voltage transistors on the same substrates includes first forming a poly gate (16) over layer gate oxide (10) on a substrate (12). An LDD implant is then performed, followed by the formation of a nitride cap (30) over the gate (16). The cap (30) is not disposed over gate electrodes associated with low voltage transistors. Thereafter, the source/drain implant is performed which forms source/drain regions (40) and (42). The cap (30) prevents the introduction of dopants into the gate electrode (16) during the source/drain implant step. This effectively increases the gate oxide width due to a larger depletion region at the oxide/polysilicon gate boundary as compared to the low voltage transistors with the higher dopant levels and the gate electrode.
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申请公布号 |
US6010929(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19970988641 |
申请日期 |
1997.12.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAPMAN, RICHARD A. |
分类号 |
H01L21/8238;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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