| 摘要 |
PROBLEM TO BE SOLVED: To form a third plane using a dicer by providing a second n-side layer plane for obtaining a laser beam having a good far-field pattern thereby eliminating warp of a wafer at the time of polishing a substrate. SOLUTION: An n-type nitride semiconductor layer (n-side layer) 2, an active layer 3, and a p-type nitride semiconductor layer (p-side layer) 4 are laminated on a substrate. Most surface layer of the p-side layer is partially etched to form a resonance face on the etched edge and the plane of a first n-side layer is exposed. The nitride semiconductor is then removed such that a laser being emitted from the resonance face will have a spreading angle θ of 30 deg. or more and the plane of a second n-side layer 502 is provided. When the spreading angle θ of laser is 30 deg. or above, the light intensity distribution of far-field pattern in the direction normal to the active layer has half-width corresponding to 30 deg.. Since light can be taken out with one-half of the highest intensity or above at 0 deg. highest efficiency is attained. |
