| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the occurrence of unetched parts and over-etched parts regardless of the sizes of pattern intervals, to suppress the occurrence of stresses in a membrane film, and then, to improve the accuracy of mask patterns, in a method for manufacturing an X-ray exposure mask which is adjusted for stresses generated during film formation so as to suppress the strain of the mask. SOLUTION: A method for manufacturing X-ray exposure mask includes a process for forming an etching stopper film 13 composed of Ru or an Ru compound on a membrane film 12 formed on a supporting substrate 11, a process for forming an X-ray absorbing material film 14 on the stopper film 13, and a process for etching off the supporting substrate 11 from the area which is irradiated with exposed light or aligning light. The method also includes a process for forming a mask pattern by etching off the X-ray absorbing material film 14 by using an etchant having a higher etching rate against the stopper film 13 than that against the film 14 and a process for etching off the stopper film 13 exposed from the film 14.</p> |
