| 摘要 |
A method of fabricating cylinder capacitors is provided comprising forming a first conductive layer and a dielectric layer on the semiconductor substrate. A via is formed in the dielectric layer. Then, a second conductive layer and a top oxide layer are formed on the dielectric layer. Part of the top oxide layer and the second conductive layer is removed by pattering the photoresist layer. A first spacer is formed at a side wall of the top oxide layer and the second conductive layer. The second conductive layer is etched by using the top oxide layer and the first spacer as a mask. Then, the top oxide layer is removed to form a second spacer. The second spacer is used as a mask in etching the second conductive layer to form a cup-shaped lower electrode. Further, a dielectric film layer and an upper electrode are formed to make a cylinder capacitor.
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