| 摘要 |
The invention comprises methods of forming contact openings and methods of forming contacts. In but one implementation, an inorganic antireflective coating material layer is formed over an insulating material layer. A contact opening is etched through the inorganic antireflective coating layer and into the insulating layer. Insulative material within the contact opening is etched and a projection of inorganic antireflective coating material is formed within the contact opening. The inorganic antireflective coating material is etched to substantially remove the projection from the contact opening. The preferred etching to remove the projection is facet etching, most preferably plasma etching. The preferred inorganic antireflective coating material is selected from the group consisting of SiOx where "x" ranges from 0.1 to 1.8, SiNy where "y" ranges from 0.1 to 1.2, and SiOxNy where "x" ranges from 0.2 to 1.8 and "y" ranges from 0.01 to 1.0, and mixtures thereof. In another implementation, only a portion of the inorganic antireflective coating layer is removed from over the insulating material layer after initially etching the contact opening. After removing the portion of the inorganic antireflective coating layer, the insulating material layer is etched to widen at least a portion of the contact opening. The invention also contemplates use of organic antireflective coating layers.
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