METHOD FOR REMOVING SIDEWALL POLYMER RAIL FROM AL/CU METAL WIRE ON SEMICONDUCTOR OR MICROELECTRONIC COMPOSITE STRUCTURE BY POST-REACTIVE ION ETCHING

摘要

PROBLEM TO BE SOLVED: To avoid temporal coupling of reactive ion etching(RIE) and wet cleaning, and use of wet chemical cleaning, for anisotropic reactive ion etching processing, in RIE processing technique in which a via hole is formed so as to penetrate an intermediate dielectric layer(ILD). SOLUTION: In a method of removing a sidewall polymer rail from an Al/Cu metal wire on a semiconductor or a microelectronic composite structure by post-reactive ion etching, a mixture of an etching gas and an acid neutralizing gas is supplied into a vacuum chamber in which the composite structure is supported to form a water-soluble matter of the sidewall polymer rail left behind on the Al/Cu metal wire by RIE processing, removing the water-soluble matter with deionized water, and removing photoresist from the composite structure by a plasma processing only by means of water or a chemical down stream plasma etching.