| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor magnetoresistance element and method for manufacturing it, wherein reduction in size is possible. SOLUTION: A semiconductor magnetoresistance film 2 is laid out on a semiconductor substrate 1 in a specified form. A metal thin film is formed on the semiconductor magnetoresistance film 2 as a short electrode 3 and an element electrode 4. An inter-line region S is formed between the semiconductor magnetoresistance films 2 to be laid out, having a gap smaller than 50μm.
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