| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite semiconductor device, wherein undesired interference between a semiconductor element including P-N junction and a Schottky barrier diode is prevented. SOLUTION: Darlington transistors Q1 and Q2 of an SEPP circuit is provided at on a semiconductor substrate 30. On the surface of a region adjoining a formation region of the transistors Q1 and Q2 of the semiconductor substrate 30 an insulating film 40 is provided, on which a polysilicon layer is provided, at which first semiconductor regions 46, 46a, and 46b of low impurity concentration and second semiconductor regions 47, 47a, and 47b of high impurity concentration are provided, and Schottky barrier electrodes 48, 48a, and 48b are provided on the first semiconductor regions 46, 46a, and 46b, while ohmic electrodes 49, 49a, and 49b are provided on the second semiconductor regions 47, 47a, and 47b. |
