Method for analyzing defects in a semiconductor

摘要

In order to verify whether defects generated when the manufacturing process is in progress results in the electric failures during the operation of the devices, and to verify which process the defects which cause electric failures are generated in, there is provided a method for analyzing defects in a semiconductor device, including the steps of: measuring the positions of physical defects generated in each process; converting the positions of said the physical defects into logic row/column address data; and comparing said logic row/column address data converted from positions of said physical defects with electric failure data which are measured after the overall processes are completed.