发明名称 SEMICONDUCTOR DEVICE STRUCTURE, MANUFACTURE THEREOF, AND LEAD FRAME USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To enable a semiconductor device to be manufactured by the use of the same lead frame without being based on the specifications of a semiconductor device and improved in heat dissipating properties and high-frequency characteristics, by a method wherein semiconductor elements are each mounted on lead frames provided with parallel leads, and all the semiconductor elements and the lead frames are sealed up with resin and then divided into separate semiconductor devices. SOLUTION: Semiconductor elements 3 are bonded by die bonding material 2 on a lead frame 6 where leads are arranged in parallel with each other, and the electrodes of the semiconductor elements 3 are connected with wires 4 for wiring to a lead frame 6 adjacent to the lead frame 6 where the element 3 is fixed. Then, the one surface of the lead frame 6 where the semiconductor elements 3 are mounted and wired is covered with sealing resin 5. Moreover, the semiconductor elements 3 sealed up with the sealing resin 5 is divided into separate semiconductor devices. By this setup, a lead where the semiconductor element 3 is fixed is made to serve as a die bonding pad, and a lead connected to the semiconductor element 3 with the wire 4 is made to serve as a wire bonding pad.
申请公布号 JPH11330313(A) 申请公布日期 1999.11.30
申请号 JP19980128896 申请日期 1998.05.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 SENYAMA KENJI;FUJIWARA TERUHISA;UEDA TAMOTSU
分类号 H01L23/28;H01L21/56;H01L23/31;H01L23/48 主分类号 H01L23/28
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