| 摘要 |
PROBLEM TO BE SOLVED: To provide an end face light emitting element which raises the light takeout efficiency and increases the quantity of emitted light. SOLUTION: This element is provided with a p-type semiconductor layer 31 in the region far from a light emission end face 38 besides being between an n-type semiconductor substrate 30 and an n-type semiconductor layer 32. When forward voltage is applied between an anode electrode and a cathode electrode, the pn junction between a p-type semiconductor layer 31 and an n-type semiconductor layer 32 is biased reversely, consequently the current can not flow in this pn junction. Accordingly, the inrush current from an anode electrode 36 flows concentrically near the light emission end face 38. As a result, the center of light emission comes close to the light emission end face 38, consequently the light takeout efficiency improves, and the quantity of emitted light increases. |
