MANUFACTURE OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE ARRAY, SEMICONDUCTOR PRODUCT, VERTICAL SEMICONDUCTOR DEVICE, AND DRAM PRODUCT

摘要

PROBLEM TO BE SOLVED: To reduce the size of a device region but not to reduce a device size to an extreme degree and not to restrict the formation of more devices by embodding a word line beside a vertical semiconductor device. SOLUTION: Semiconductor devices 400a, 400b are formed on a substrate 403. An active region 445 is formed between the semiconductor devices 400a and 400b. A top insulating layer 422 is formed on the top of a gate insulating layer 426 and a gate layer 428. A bit line contact 418 is formed directly above the active region. If a bit line 430 is biased toward the substrate 403 and a word line 420, a depression region 460 is formed between the bit line contact 418 and a deep trench 412. If the bit line 430 and the substrate 403 are biased and the word line 420a is excited, charges can be released from or stored in a deep trench 412a.