发明名称 |
Method of producing an aluminum film |
摘要 |
A method of producing an aluminum film on a substrate, from which very narrow aluminum conductor tracks can be created that are highly resistant to electromigration and/or stress migration. The substrate with the polycrystalline aluminum film is cooled in an oven in a controlled fashion from a target temperature to a final temperature such that energetically stable Al2Cu- theta -phases are formed directly among the individual aluminum grains in the aluminum film. The cooling is controlled such that the instantaneous temperature passes through a predetermined temperature profile. Within the range of 320 DEG C. to 200 DEG C., the cooling gradient is less than 6 DEG C. per hour.
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申请公布号 |
US5993908(A) |
申请公布日期 |
1999.11.30 |
申请号 |
US19970864277 |
申请日期 |
1997.05.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SCHNEEGANS, MANFRED;DIETRICH, STEFAN;HIRSCH, ALEXANDER |
分类号 |
H05K1/09;C23C14/14;C23C14/58;C23C16/20;C23C16/56;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):B05D3/02;B05D5/12 |
主分类号 |
H05K1/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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