发明名称 Method of producing an aluminum film
摘要 A method of producing an aluminum film on a substrate, from which very narrow aluminum conductor tracks can be created that are highly resistant to electromigration and/or stress migration. The substrate with the polycrystalline aluminum film is cooled in an oven in a controlled fashion from a target temperature to a final temperature such that energetically stable Al2Cu- theta -phases are formed directly among the individual aluminum grains in the aluminum film. The cooling is controlled such that the instantaneous temperature passes through a predetermined temperature profile. Within the range of 320 DEG C. to 200 DEG C., the cooling gradient is less than 6 DEG C. per hour.
申请公布号 US5993908(A) 申请公布日期 1999.11.30
申请号 US19970864277 申请日期 1997.05.28
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 SCHNEEGANS, MANFRED;DIETRICH, STEFAN;HIRSCH, ALEXANDER
分类号 H05K1/09;C23C14/14;C23C14/58;C23C16/20;C23C16/56;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):B05D3/02;B05D5/12 主分类号 H05K1/09
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