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发明名称
MEMORY DEVICE TEST CIRCUIT
摘要
申请公布号
KR100231136(B1)
申请公布日期
1999.11.15
申请号
KR19970001501
申请日期
1997.01.20
申请人
HYUNDAI MICRO ELECTRONICS CO.,LTD.
发明人
PARK, YI-HWAN
分类号
G01R31/28;(IPC1-7):G01R31/28
主分类号
G01R31/28
代理机构
代理人
主权项
地址
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