Insulating trench isolation for MOS-transistors in the manufacture of DRAM

摘要

The semiconducting device has an insulating trench isolation film (105) embedded in a trench on a substrate (101) and a doping material diffusion layer. An insulating intermediate film (112) on the substrate surface has a contact hole (113) to the diffusion layer and wiring with conducting material in the contact hole. A protective film (109) with etching selectivity in comparison to the insulating film is formed between the substrate, apart from the contact hole region, and the insulating intermediate film. An Independent claim is also included for a method of producing a semiconducting device.