发明名称 |
Modified gallium selenide crystals for high power nonlinear optical applications |
摘要 |
A new method for improving the mechanical properties and nonlinear optical performance characteristics of gallium selenide crystals (GaSe) is disclosed. A charge of GaSe crystals was doped with indium before being made into a crystal. The indium-doped GaSe crystals have improved physical properties in that they can be cut along the cleave planes and the cleaved surfaces polished without the usual delaminations typically observed in prior art pure GaSe crystals. The indium-doped crystals were tested in a second harmonic generation (SHG) system and found to have nearly twice the SHG efficiency as pure, or undoped, GaSe crystals.
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申请公布号 |
US5980789(A) |
申请公布日期 |
1999.11.09 |
申请号 |
US19980058125 |
申请日期 |
1998.04.10 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
FERNELIUS, NILS C.;SINGH, NARSINGH B.;SUHRE, DENNIS R.;BALAKRISHNA, VIJAY |
分类号 |
C30B11/00;G02F1/355;(IPC1-7):F21V9/00;G02B5/20;G02F1/35;C01B19/04 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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