| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce power consumption on half tone display by constituting a MOS transistor(TR) as vertical structure for allowing a carrier to run in the film thickness direction of a semiconductor layer formed on a substrate. SOLUTION: Ferroelectric controlling electrodes and signal electrodes are formed like a matrix by a thin film semiconductor process and a MOS type switch element is formed on an intersecting part of respective wirings. The switch element has vertical thin film TR structure and allows a carrier to run in the film thickness direction of the semiconductor layer formed on the substrate. In this case, a silicon active layer 9 is deposited on signal electrodes 10 formed like strips and a ferroelectric film 7 is deposited on the layer 9. Ferroelectric controlling electrodes 8, 11, 13 are also patterned so as to intersect with the electrodes 10 while leaving the film 7 like a comb. Then connection holes to be connected to the lower silicon active layer 9 are formed on a display pixel electrodes and a silicon active layer 6 is deposited again so as to fill the holes. Then a display electrode 5 is formed on the layer 6 in each pixel to obtain an array substrate.</p> |
