| 摘要 |
The directional coupler consists of a GaAs substrate 20 surmounted by epitaxially-deposited III-V type semiconductor layers. Starting from the substrate 20, these layers consist of a first layer 22 of AlxGa1-xAs, a second guide layer 24 of GaAs and a third layer 26 of AlyGa1-yAs, the latter two layers 24, 26 being etched to form two parallel strips at the top of which Schottky contacts 33, 36 are deposited. The light 42 is propagated under one and/or the other of the strips forming guides in the GaAs guide layer 24. Application in optical telecommunications. <IMAGE>
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