发明名称 Method for manufacturing tunable laser
摘要 A method for making a surface-type semiconductor laser specially devised to keep the stability of the wavelength at the next generation laser for WDM, which does not cause a raising characteristic variation with time because the laser wavelength of the individual device can be controlled easily and exactly as required and the devices in which the wavelength control have completed is stable in their material properties. The surface-type semiconductor laser is made by growing the cladding layer within the active layer at a low temperature, growing the upper and the underlying superlattice mirror layers and the quantum well structure within the active layer at a high temperature and then sintering the structure thus formed at a high temperature.
申请公布号 US5976903(A) 申请公布日期 1999.11.02
申请号 US19980020711 申请日期 1998.02.09
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 LEE, BUN;BAEK, JONG HYUB
分类号 H01S5/00;H01S3/02;H01S5/183;(IPC1-7):H01L21/00 主分类号 H01S5/00
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