| 摘要 |
A process for manufacturing a semiconductor, including generating a first plasma of a V group element from a V group element source; generating a second plasma of an auxiliary material for activating a metal organic compound containing a III group element separately from and at the same time as the first plasma; adding the vaporized metal organic compound and the plasma of the auxiliary material to the plasma of the V group element; and forming, on a substrate, a film of a semiconductor compound containing the III group element and the V group element. A semiconductor and a semiconductor device having high quality and high functions can be manufactured in a short time at high yield. An amorphous material includes at least hydrogen, a III Group element, preferably gallium, and nitrogen. In the infrared absorption spectrum measured of the amorphous material, the ratio of the absorbance IN-H, at the absorption peak indicating the bond (N-H) between nitrogen and hydrogen to that, IC-H, at the absorption peak indicating the bond (C-H) between carbon and hydrogen is 2 or more; and the ratio of the absorbance, IN-H, at the absorption peak indicating the bond (N-H) between nitrogen and hydrogen to the absorbance, IIII-H, at the absorption peak indicating the bond (III-H) between the III Group element and hydrogen is 0.2 or more.
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