发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain a resist compsn. having high sensitivity, high resolution and an excellent pattern profile to be used for a short wavelength light source by combining a specified structure of a resin and a photobase producing agent. SOLUTION: The positive photoresist compsn. used contains a compd. (a) having groups expressed by the formula which are decomposed by an acid to increase the solubility in an alkali developer, a compd. (b) which is decomposed by irradiation of active rays or radiation to produce an acid, and a compd. (c) which is decomposed by irradiation of active rays or radiation to produce a base. In the formula, R1 is a hydrogen atom or methyl group, R2 is a methyl group or ethyl group, and R3 is 1-4C alkyl group. The compd. (a) includes two kinds of an alkali-soluble resin (polymer type dissolution inhibiting compd.) containing groups expressed by the formula which can be decomposed by an acid, and a nonpolymer dissolution inhibiting compd.
申请公布号 JPH11295895(A) 申请公布日期 1999.10.29
申请号 JP19980104998 申请日期 1998.04.15
申请人 FUJI PHOTO FILM CO LTD 发明人 YAMANAKA TSUKASA;FUJIMORI TORU
分类号 G03F7/004;C08K5/00;C08L25/18;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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