| 摘要 |
PROBLEM TO BE SOLVED: To set an element to be fine and to set density to be high, by forming Si on the barrier layer of TiN in a contact hole, forming a silicide layer with an annealing processing and embedding Al in the contact hole. SOLUTION: A contact hole whose aperture is 0.3-0.5μm is formed in an interlayer insulating film 10 on a semiconductor substrate and a Ti film 11 is formed with the film thickness of 20-70 nm. Then, a TiN film 12 is formed as a barrier film with the film thickness of 30-150 nm. Si of a wetting layer is formed by the film thickness of 10-50 nm by a sputtering method. A silicide layer 13 with Ti is formed by the annealing processing of 750-900 deg.C. Then, Al is formed into the film thickness of 150-300 nm at the high speed of not less than 10 nm/second by sputtering at the temperature of not more than 200 deg.C. Then, it is heated to a substrate temperature 350-500 deg.C in the same chamber and Al is form into the film thickness of 300-600 nm at the low speed of not more than 3 nm/second. Thus, barrier property can be improved, an element can be made to be fine and density is set to be high.
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