发明名称 Method for altering cable semiconductive layer
摘要 A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (>104 OMEGA -cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers.
申请公布号 US5973266(A) 申请公布日期 1999.10.26
申请号 US19980046897 申请日期 1998.03.24
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 SHREVE, GARY A.;SOMASIRI, NANAYAKKARA LIYANAGE DON;MOONEY, JUSTINE ANNE;HULME-LOWE, ALAN GEORGE;GUILBERT, CURTIS ROY
分类号 H01B13/00;H02G1/14;H02G15/02;H02G15/064;H02G15/068;H02G15/103;H02G15/184;H02G15/188;(IPC1-7):H02G15/02 主分类号 H01B13/00
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