发明名称 |
Method of forming a metal interconnection line for semiconductor device |
摘要 |
Disclosed is a method of forming a metal interconnection line for a semiconductor device. A metal interconnection line for semiconductor device according to the present invention is formed by the following processes. A semiconductor substrate having a conductive layer thereon is provided and an insulating layer is formed on the semiconductor substrate. A contact hole is formed by etching a selected portion of the insulating layer existing on the conductive layer to expose a predetermined portion of the conductive layer. A barrier metal film is then formed on a surface of the contact hole and the insulating film. A first aluminum alloy film is uniformly formed on the barrier metal film and a metal film for use as a plug is formed on the first aluminum alloy film filling the contact hole wherein the contact hole is covered with the first aluminum alloy film. A contact plug is then formed by etching back the metal film to expose the first aluminum alloy film. A second aluminum alloy film is formed on the contact plug and the first aluminum alloy film.
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申请公布号 |
US5970377(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970911872 |
申请日期 |
1997.08.15 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK, SANG-HOON |
分类号 |
H01L21/768;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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