SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

An opening having a diameter smaller than a minimum possible dimension formable by photolithography is formed in an insulating layer on an interlayer insulating layer covering an MOS transistor. An insulating layer is formed to cover inner wall surface of the opening. Contact hole is formed from insulating layer to reach the semiconductor substrate. Contact hole has a first opening diameter smaller than the minimum possible dimension formable by photolithography at the portion of interlayer insulating layer and insulating layer, and hence a second opening diameter larger than the first opening diameter at a portion of the insulating layer. Thus, a semiconductor device suitable for higher degree of integration and a method of manufacturing the semiconductor device with small number of steps can be provided.