Deposition of an insulating film comprising carbon

摘要

There is provided a method of fabricating a semiconductor device including an insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film (103) composed of carbon family material (b) desorbing volatile components out of the insulating film, and (c) depositing a film (104) on the insulating film. For instance, the step (b) is performed by annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.