发明名称 |
Post-etching alkaline treatment process |
摘要 |
The present invention is directed to a process for removing aluminum contamination from the surface of an etched semiconductor wafer. The process is carried out by first lapping a semiconductor wafer in a lapping slurry containing aluminum, etching the wafer, and finally immersing the wafer in an aqueous bath, the bath comprising an alkaline component and a surfactant.
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申请公布号 |
US5964953(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19980084565 |
申请日期 |
1998.05.26 |
申请人 |
MEMC ELECTRONICS MATERIALS, INC. |
发明人 |
METTIFOGO, GIANPAOLO |
分类号 |
C11D3/02;C11D11/00;H01L21/304;H01L21/306;(IPC1-7):C30C23/00;B08B6/00;B08B7/00 |
主分类号 |
C11D3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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