| 摘要 |
<p>PROBLEM TO BE SOLVED: To restrain polarization of a flattened film or an interlayer insulating film of a thin film transistor, stabilize a threshold voltage, and obtain uniform brightness display in a plane, by specifying relative permittivity of the flattened film. SOLUTION: An interlayer film 12 is formed in which an SiO2 film 9, an SiN film 10 and an SiO2 film 11 are laminated in order on the whole surface of a gate insulating film 3, an active layer 4 and a stopper 8. Metal is applied in a contact hole, which is formed in the interlayer insulating film 12 corresponding to a drain 6, thereby forming a drain electrode 13. A flattened film 15 is formed on the whole surface. A contact hole is formed at a position in the flattened film 15 which corresponds to a source 5, and a display electrode 16 serving as a source electrode 14 being in contact with the source 5 is formed. In this case, relative permittivity of the flattened film 15 is made at most 5, preferably, at most 4. As a result, polarization generated by water content in liquid crystal or water content permeating from a gap of seal adhesive agent can be restrained.</p> |
