| 摘要 |
PROBLEM TO BE SOLVED: To enable application to a heavy current. SOLUTION: This semiconductor device is provided with a first electrode 3, a diode 1 which is formed on the first electrode 3 and in contact with it, and has a size different from that of the first electrode 3, a plurality of IGBTs 2, and a second electrode 5 having a plurality of pillar-shaped parts formed on the diode 1 and the IGBTs 2. The first electrode 3, the second electrode 5, the diode 1 and the IGBTs 2 are built in the same package through pressure welding. The pillar-shaped parts of the second electrode 5 have identical shape and widths, which are in matching with the element regions of the IGBTs 2. |
