发明名称 |
Power semiconductor component with monolithically integrated precision resistor and method for the manufacture thereof |
摘要 |
A power semiconductor component having a cell structure includes a metallic resistance track that is insulated from the semiconductor body of the power semiconductor component and from a control electrode by a non-conductive layer. The resistance track is provided in a lateral region between cells of the power semiconductor. The active area of the component is not made smaller by the presence of the resistance track and the resistance track is produced simultaneously with a metallic layer of the component which provides electrical contact with a main electrode of the power semiconductor so that no additional manufacturing steps are required for adding the resistive track.
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申请公布号 |
US5962912(A) |
申请公布日期 |
1999.10.05 |
申请号 |
US19950537133 |
申请日期 |
1995.09.29 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HIEROLD, CHRISTOFER |
分类号 |
H01L27/04;H01L21/822;H01L23/34;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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